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| MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2HB * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 1020.5 6 14 6 14 6 17 7-M4 4-5.5 BuP BvP EvP BvN EvN U V BwP EwP BwN EwN N N W P BuP EuP BvP EvP BwPEwP P 30 16.5 P EuP BuN EuN 740.25 30 24.5 8.5 17 2 22 20 20 800.25 22 11 Tab#110, t=0.5 8.1 30+1.5 -0.5 29.5 LABEL 7 27 N 10 43 U V W N 12 910.5 P BuN EuN BvN EvN BwN EwN Note: All Transistor Units are 4-Stage Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 50 50 400 3 500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 660 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=50A, IB=67mA -IC=50A (diode forward voltage) IC=50A, VCE=4.0V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=50A, IB1=0.1mA, IB2=-1.0A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 50 4.0 4.0 1.8 -- 2.5 15 3.0 0.31 1.2 0.2 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 0 2 3 4 5 7 10 1 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C VCE=10V COLLECTOR CURRENT IC (A) 80 IB=4 0 60 A 00m IB=2 A 67m IB= 0mA IB=2 DC CURRENT GAIN hFE Tj=25C 0mA VCE=4V 40 20 IB=10mA 0 0 1 2 3 4 5 2 3 4 5 7 10 2 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 2.8 3.2 3.6 4.0 4.4 4.8 VCE=4V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 10 0 7 5 4 3 2 10-1 10 0 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE VCE(sat) IB=67mA Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) IC=50A 3 2 IC=30A SWITCHING TIME ts 10 1 7 5 VCC=600V 4 IB1=100mA 3 -IB2=1A Tj=25C 2 Tj=125C 10 0 7 5 4 3 tf ton 3 4 5 7 10 1 2 3 4 5 7 10 2 23 1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 ts REVERSE BIAS SAFE OPERATING AREA 100 COLLECTOR CURRENT IC (A) 2 ts, tf (s) SWITCHING TIME 10 1 7 5 4 3 2 10 0 80 IB2=-1A tf 60 40 VCC=600V IC=50A 7 IB1=100mA Tj=25C 5 4 Tj=125C 3 10-1 2 3 4 5 7 10 0 20 Tj=125C 2 3 4 5 7 10 1 0 0 200 400 600 800 1000 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 100 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) TC=25C NON-REPETITIVE 50S DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA DC 1mS 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 7 0.5 0.4 Zth (j-c) (C/ W) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0.3 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 0 0.4 0.8 1.2 Tj=25C Tj=125C 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 500 400 Irr (A), Qrr (c) 10 2 7 5 4 3 2 10 1 Irr 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 1 7 Qrr 5 4 trr 3 VCC=600V 2 IB1=100mA -IB2=1A 0 10 10 0 2 3 4 5 7 10 1 10 0 10 -1 2 3 4 5 7 10 2 Tj=25C Tj=125C CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 2.0 1.8 1.6 Zth (j-c) (C/ W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) 300 |
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